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    • 专利摘要:
    Encapsulation structure (100) comprising: - a cover (114) secured to a first substrate (102) and forming first (110) and second (112) distinct cavities between the cover and the first substrate, - first (116) ) and second (122) channels formed in the first substrate and / or in the cover and / or between the first substrate and the cover, the first channel having a first end (117A) opening into the first cavity and a second end (117B ) opening out of the first cavity through a first hole (120) passing through the hood, the second channel having a first end (123A) opening into the second cavity and a second end (123B) opening out of the second cavity through a second hole (126) passing through the hood, a height HA of the first channel at its second end is less than a height HB of the second channel at its second end ity.
    公开号:FR3021645A1
    申请号:FR1455019
    申请日:2014-06-03
    公开日:2015-12-04
    发明作者:Xavier Baillin
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The invention relates to the field of encapsulation structures comprising a plurality of cavities advantageously intended to comprise different atmospheres, and in which different microstructures are provided. devices, for example of the MEMS, NEMS, MOEMS, NOEMS type, or infrared detectors of the micro-bolometer type, are advantageously intended to be hermetically encapsulated. Some micro-devices require for their proper functioning to be enclosed in a cavity whose atmosphere (in terms of the nature of the gases and pressure) is controlled. For this purpose, it is possible to make these micro-devices collectively on slices, or wafers or substrates, of silicon and then to encapsulate them in cavities via a transfer of a cap corresponding generally to another silicon or glass substrate ( assembly "Wafer to Wafer", also called assembly W2W), or via encapsulation by one or more thin layers superimposed and deposited on a sacrificial layer which, after destruction, forms free volumes between the substrate and the thin layers forming the cavities ( encapsulation "Thin Film Packaging", also called TFP, or PCM for "Thin Film Packaging"). The hermetic cavities thus defined make it possible to preserve the atmospheres which surround the micro-devices in the cavities vis-à-vis the external atmosphere.
    [0002] The addition of a thin layer getter, previously deposited on the one or one of the substrates prior to the production of a cavity, makes it possible to control the atmosphere in the cavity. Thus, the creation of a cavity including a micro-device under controlled atmosphere generally includes the deposition of a getter on either of the two substrates prior to the assembly operation for W2W technology. or, in the case of a TFP technology, the deposition of the getter is at the first level on the host substrate of the micro-device or directly in the form of a first encapsulation layer. It is possible to obtain by this technique a minimum residual pressure of gas in the cavity, for example between about 10-3 and 10 mbar. The addition of a rare gas (argon for example) during the closing operation of the cavity and in the presence of a getter makes it possible to control residual pressures greater than these values. Some micro-devices, for example inertial micro-devices with six degrees of freedom, including in particular an accelerometer and a gyroscope in the same chip, require a specific packaging process since each of the micro-devices is encapsulated in a separate hermetic cavity. under controlled atmosphere because the two micro-devices operate at different pressures. To seal at least two cavities in different atmospheres, there are several solutions that generally apply for W2W encapsulation and, in some cases, TFP encapsulation. US 8,590,376 B2 discloses a device having two sensors each encapsulated in a separate cavity, the cavities being obtained by W2W encapsulation. The nature of the gases and / or the pressure within the cavities are individually controlled in each cavity by having a getter in one of the cavities and not having a getter in the other cavity, or by disposing in the cavities of the getters having different absorption properties.
    [0003] Since the sealing of the cavities is performed during the assembly of the two wafers, it is difficult to control the quality of the residual atmosphere (nature of the gases and pressure). Indeed, it is related to the prior art processes prior to assembly that generate adsorption gaseous especially on the walls of the cavities. Problems of reproducibility 3021645 3 arise in this case. This solution therefore makes it possible to obtain pressures of between about 10 -4 mbar and a few mbar of an uncontrolled atmosphere. US 8,350,346 B1 proposes to create cavities of 5 different volumes. Thus, for the same closing pressure, the residual pressures will depend directly on the ratio of cavity volumes because the surface / volume ratio decreases when the cavity is deeper, thus conferring a lower pressure for the cavity of greater depth. However, since the possible volume variation between the cavities is limited, the pressure differences that can be obtained within the cavities are also limited (difference by a factor of 2 or 3 maximum). In addition, a degassing process occurs during the closing of the cavities, which is based on the adsorbed species at the surfaces of the cavities, which poses reproducibility problems. The documents US Pat. No. 8,035,209 B2 and US 2014/0008738 Al15 propose to close two cavities during the same operation, then to open at least one of the two cavities and then to close it under a different pressure via a deposit of one thin film. It is also described the possibility of making, through a first encapsulation layer, access holes to the two cavities, the dimensions of the holes being different for the two cavities. Thus, a first deposition of a thin film makes it possible to obstruct the holes of smaller dimensions and hermetically seal the cavity associated with these holes, whereas a second deposit then makes it possible to seal the other cavity. However, this process requires the implementation of many steps compared to other processes. In addition, there is a risk of pollution of the interior of the cavities, particularly at the level of the hole with larger dimensions during the deposition of the first encapsulation layer. Finally, when this method is applied for encapsulation of the TFP type, it has the disadvantage of also creating a deposit in the cavities which can be troublesome for the proper functioning of the device or which requires a suitable design to avoid this disadvantage. Document US 2012/0326248 A1 describes four solutions for making several cavities with different atmospheres.
    [0004] The first solution is based on the creation of a first cavity before the creation of a second cavity during the assembly step. The first cavity is plugged using deposition methods on a pre-existing cavity. The second solution is based on the control of the assembly cycles between the wafers, and proposes three technologies. The first technology involves sealing cords of different melting temperatures. Thus, during a first melt it is possible to close a first set of cavities under a given atmosphere and then increase the temperature to close a second set of cavities in another atmosphere. The second technology relies on the use of the same sealing material, but different cord designs. For the first cavities, the cords are continuous, whereas for the second cavities, the cords have an opening that makes it possible to create a leak between the interior of the cavity and the sealing chamber. It is thus possible to close the first cavities under a given atmosphere, then to change the atmosphere and to press more on the assembly so as to close the second cavities. The third technology uses a degasser or getter material, which is introduced into at least one cavity prior to assembly. It is activated either as a degasser or as a getter under the action of temperature. The essential difficulties of this technology, however, are the control of the final pressure as well as the reproducibility, since it is difficult to control the gas content in the degassing material. The fourth technology involves sealing cords of different heights on one of the two wafers to be assembled. They are, for example, thicker around the periphery of the first cavities, compared with the second cavities. It is thus possible to close the first cavities in one atmosphere, then the seconds in another atmosphere. The third solution implements the creation of reservoir in the pre-cavities machined in the first substrate. These pre-cavities, outside the reservoir zone, are in communication with the ambient atmosphere. The final cavities are formed on the pre-cavities during assembly between the substrates. The opening of the reservoir then makes it possible to fill the cavity with the gas of the reservoir. The fourth solution uses the post-assembly creation of a channel emerging either on one of the cavities or close to it, while the other cavities have been closed during assembly. In this case, the channel opens on a silicon oxide layer which is on the periphery of the cavity and whose resistance to permeation of gas is known. It is thus possible to control the filling of this cavity with a given atmosphere, and then to plug the channel with a suitable deposit. All these solutions require either many technological steps, or use, at least in a cavity, a residual pressure directly from the assembly cycle, thus posing problems of reproducibility.
    [0005] The document US 2014/0038364 A1 proposes to create diffusion windows of different sections in the hood (in particular for a glass cover, permeable to helium, the diffusion windows are defined by a metal mask, impermeable to the diffusion of helium, deposited on the hood). These windows are defined once the sealed cavities are sealed and the gas is introduced into the cavities by exposing the component to a controlled gas pressure for a defined time and temperature. Once the cavities are filled to the desired pressure, an hermetic film is deposited to close the windows. This solution, however, involves controlling the residual atmosphere in the cavities after assembling the substrates. It is therefore possible to encounter problems of uniformity on the same wafer and reproducibility of one wafer to another. In addition, this technique applies only to a hood permeable to certain gases, which limits the choice of the nature of the hood and gases. SUMMARY OF THE INVENTION An object of the present invention is to propose an encapsulation structuring comprising several cavities in which different atmospheres (in terms of the nature of the gases and pressure) can be obtained and not having the disadvantages of the structures. of the prior art previously described.
    [0006] For this, the present invention proposes an encapsulation structure comprising: at least one cover secured to at least one first substrate and forming at least first and second distinct cavities between the cover and the first substrate; first and second channels formed in the first substrate and / or in the cover and / or between the first substrate and the cover, such that the first channel has a first end opening into the first cavity and a second end opening out of the first cavity via at least one first hole formed through the hood, and that the second channel has a first end opening into the second cavity and a second end opening out of the second cavity through at least one a second hole formed through the hood, wherein a height HA of the first channel at its second end is less than a height HB of the second channel at its second end. Each cavity is provided with at least one channel placing the interior of the cavity in communication with the outside thereof. Because the height HA of the first channel is smaller than that (height HB) of the second channel, this first channel can therefore be closed before the second channel, for example by depositing a first closure layer whose thickness is greater than the height HA and less than the height HB, thus closing only the first cavity to the desired atmosphere without closing the second cavity. The second cavity can then be closed with another atmosphere independently of that in the first cavity. The encapsulation structure according to the invention has the following advantages: it makes it possible to produce several closed cavities with controlled atmospheres in each of them and independent of one another; the ranges of pressures that can be obtained in the cavities are extended, and may for example be up to about 10-6 mbar; no limitation on the possible gaps between the pressures with which the cavities can be closed; - good reproducibility of the atmospheres with which the cavities can be closed; - number of steps reduced to achieve the closure of the cavities; - no or little risk of pollution inside the cavities, in particular by the materials used to close the cavities; - no limitation on the nature of the gases that can be enclosed in the cavities. The height, or thickness, of a channel may correspond to a dimension of said channel which is substantially perpendicular to a main direction along which said channel extends (for example, in the case of a rectilinear channel, the channel extends in a main direction from the first end to the second end of the channel). The height may for example correspond to a dimension of the channel which is substantially perpendicular to a main face of the first substrate, for example the face of the first substrate on which the cover is located. The height may for example correspond to a dimension of the channel which is substantially perpendicular to a main face of the cover, in particular in the case of a channel formed in the cover, and / or to a main face of the first substrate. The height HA of the first channel may be substantially constant over the entire length of the first channel, that is to say between its first end and its second end. The height Hg of the second channel may be substantially constant over the entire length of the second channel.
    [0007] The first hole may include, at a front face of the hood (face opposite to that lying opposite or against the first substrate), a section belonging to a plane substantially perpendicular to the height of the first channel. Similarly, the second hole may comprise, at the front face of the hood, a section belonging to a plane substantially perpendicular to the height of the second channel. The first and second channels may form side vents (i.e., opening on the side of the cavities) having different heights. The encapsulation structure according to the invention can be advantageously used for collective encapsulation of several micro-devices intended to operate under different atmospheres, that is to say at different pressures and / or in gaseous environments. different. The channels may be made at the edges of the cavities, in particular when the channels are formed in the first substrate and / or between the first substrate and the cover, and may therefore not be arranged in line with micro-devices arranged in the cavities, which avoids polluting them or damaging them when closing the cavities.
    [0008] The second end of the first channel may be plugged by at least a first portion of a first closure layer of thickness E1 greater than the height HA and lower than the height HB, and the second end of the second channel can be blocked. by at least: a second portion of the first closure layer and a portion of a second closure layer of thickness E2 such that HB <(E1 + E2), or - the second portion of the first closure layer and a portion of material brazed to the second portion of the first closure layer and of thickness E2 such that HB <(E1 + E2), or - the second portion of the first closure layer and a capping layer portion plugging the second hole on the hood. The first and second closure layers may be, independently of one another, monolayer or multilayer. Similarly, the capping layer may be monolayer or multilayer, and deposited on all or part of the cover so that at least a portion of this capping layer closes the second hole formed through the cover. At least one first micro-device may be disposed in the first cavity and / or at least one second micro-device may be disposed in the second cavity. The first and / or the second micro-device may be MEMS, NEMS, MOEMS, NOEMS or micro-bolometer type infrared detectors. The encapsulation structure may be such that: when the first micro-device is disposed in the first cavity, the first closure layer comprises at least one electrically conductive material, the encapsulation structure comprising at least a first element of electrical connection connected to the first micro-device and the first portion of the first closure layer, and at least one first electrical contact disposed at least in part in the first hole and connected to the first portion of the first closure layer and / or - when the second micro-device is disposed in the second cavity, the materials blocking the second end of the second channel are electrically conductive, the encapsulation structure comprising at least a second electrical connection element connected to the second micro -device and the second portion of the first closure layer, and at least one two th electrical contact disposed at least partly in the second hole and connected to the portion of the second closure layer or to the brazed portion of material on the second portion of the first closure layer. Thus, at least one of the micro-devices can be electrically accessible from the front face of the encapsulation structure via the first and / or second electrical contact. The first and / or the second electrical contact may in particular extend along the first and / or second hole and also on the hood. The first channel can pass through at least one side wall of the first cavity and / or the second channel can pass through at least one side wall of the second cavity.
    [0009] The cover may comprise at least one substrate called second substrate and secured to the first substrate and such that the first and second cavities are formed at least partly in the second substrate. Such an encapsulation structure can be achieved by a method of W2W type. The first and / or second channel may be formed in the second substrate.
    [0010] In this case, the second substrate may be secured to the first substrate via a bonding interface disposed between the first substrate and the second substrate and such that the first and second channels are formed at least in part in the first substrate. bonding interface. In this configuration, it is also possible for the channels to be formed in the bonding interface as well as in the first substrate and / or in the second substrate. The cover may comprise at least one thin layer disposed on the first substrate, and the first and second channels may be formed at least in the first substrate. Such an encapsulation structure can be achieved by a TFP type method. The term "thin layer" refers here to a layer of material whose thickness is less than or equal to about 20 μm. The cover may comprise at least two thin layers superimposed one above the other and disposed on the first substrate, and the first and second channels may be formed at least by spaces between the two thin layers. Such an encapsulation structure can be achieved by a TFP type method. The invention also relates to a method for producing an encapsulation structure, comprising producing at least one cover 15 secured to at least one first substrate forming at least first and second distinct cavities between the cover and the first substrate. and providing at least first and second channels in the first substrate and / or in the cover and / or between the first substrate and the cover, such that the first channel has a first end opening into the first cavity and a first Second end opening out of the first cavity via at least one first hole formed through the hood, and that the second channel has a first end opening into the second cavity and a second end opening out of the second cavity. via at least a second hole formed through the hood, wherein a height 25 HA of the first channel at its second end is less than a height Hg of the second channel at its second end. The method may further comprise, after the realization of the cover and the first and second channels, a deposition of at least a first closure layer of thickness E1 greater than the height HA and lower than the height HB 3021645 at least a first portion of the first closure layer closes the second end of the first channel, then: - a deposit of at least a second closure layer of thickness E2 such that HB <(E1 + E2) and that at least a second portion of the first closure layer and a portion of the second closure layer seal the second end of the second channel, or - a deposit of at least a portion of solder material of thickness E2 such that HB < (E1 + E2) on the second portion of the first closure layer, and then brazing the portion of solder material, or 10 - producing at least a portion of capping layer plugging the second hole on the cover. The realization of the cover and the first and second channels may comprise at least the implementation of the following steps: - realization of the first and second channels at one side of a second substrate to be secured to the first substrate; - Making the first and second cavities at said face of the second substrate; - Securing said face of the second substrate to the first substrate; - Making the first and second holes through the second substrate, wherein the first channel can pass through at least one side wall of the first cavity and / or wherein the second channel can pass through at least one side wall of the second cavity.
    [0011] It is possible to make the holes, opening or not, just after the channels. Thus, the holes, the channels and the cavities can be pre-machined in the cover for a W2W-type encapsulation prior to the joining of the substrates to one another, which makes it possible to avoid any wet technological operation to achieve these post elements. -solidarisation.
    [0012] Alternatively, the embodiment of the cover and the first and second channels may comprise at least the implementation of the following steps: - production of the first and second cavities at a face of a second substrate to be secured to the first substrate; Performing a bonding interface on said face of the second substrate and / or on a face of the first substrate to which the second substrate is to be secured, the first and second channels being formed at least partly in the interface of collage; securing said face of the second substrate to the first substrate via the bonding interface; - Making the first and second holes through the second substrate. Again, the holes can be made just after the channels. Thus, the holes, the channels and the cavities may be made prior to the joining of the substrates to one another, which makes it possible to avoid any technological operation by the wet method to achieve these post-solidarization elements. According to another variant, the embodiment of the cover and the first and second channels may comprise at least the implementation of the following steps: - production of the first and second channels in the first substrate; - Making first and second portions of sacrificial material on the first substrate, whose volumes correspond to those of the first and second cavities and such that the first portion of sacrificial material covers at least a portion of the first channel and the second portion of sacrificial material covers at least a portion of the second channel; depositing at least one thin layer on the first and second portions of sacrificial material; Making the first and second holes through the thin layer; etching the first and second portions of sacrificial material through the first and second holes.
    [0013] In this case, the channels are made in the first substrate prior to the realization of the hood by a method of TFP type. This makes it possible in particular to avoid a wet technology operation when the cavities are open. According to another variant, the embodiment of the cover and the first 10 and second channels may comprise at least the implementation of the following steps: - realization of first and second portions of sacrificial material on the first substrate, whose volumes correspond to those of first and second cavities; Depositing at least a first thin layer on the first and second portions of sacrificial material; - Making third and fourth holes through the first thin layer, the third hole being formed at a location of the first end of the first channel to be made and the fourth hole being formed at a location of the first end of the second channel to be made; - Making, on the first thin layer, at least a third portion of sacrificial material having a thickness equal to the height HA, at least at a location of the first channel, and at least a fourth portion sacrificial material having a thickness equal to the height Hg, at a location of the second channel; depositing at least a second thin layer on the first thin layer, covering the third and fourth portions of sacrificial material; Making the first and second holes through the second thin layer; etching the first, second, third and fourth portions of sacrificial material through at least the first and second holes.
    [0014] BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1A and 1B schematically represent a structure encapsulation, object of the present invention, according to a first embodiment; FIGS. 2 and 3 schematically represent steps for closing the cavities of the encapsulation structure according to the first embodiment; FIGS. 4 to 6 show schematically the encapsulation structure, object of the present invention, according to the first embodiment and whose cavities are closed in different ways; FIGS. 7A and 7B show schematically an encapsulation structure, object of the present invention, according to a second embodiment; - Figures 8 and 9 schematically show closure steps of the cavities of the encapsulation structure according to the second embodiment; FIGS. 10A to 10C show schematically an encapsulation structure, object of the present invention, according to a variant of the second embodiment.
    [0015] Identical, similar or equivalent parts of the various figures described below bear the same numerical references so as to facilitate the passage from one figure to another. The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable. The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with one another.
    [0016] DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Referring first to FIGS. 1A and 1B which schematically show an encapsulation structure 100 according to a first embodiment (FIG. 1A is a sectional sectional view and FIG. 1B is a top view of the structure 100).
    [0017] The structure 100 comprises a first substrate 102 comprising for example semiconductor such as silicon, or glass. Two micro-devices 104 and 106 are made at a front face 108 of the substrate 102. The micro-devices 104 and 106 are arranged in different cavities, namely a first cavity 110 for the first micro-device 104 and a Second cavity 112 for the second micro-device 106. The cavities 110 and 112 are formed in a cover 114 corresponding to a second substrate, for example in semiconductor or glass, secured to the substrate 102 at its front surface 108 The structure 100 here corresponds to a structure obtained by a W2W type encapsulation process. The cover 114 advantageously comprises a monocrystalline semiconductor capable of being anisotropically etched in order to structure it in three dimensions. Each of the cavities 110 and 112 communicates with the environment outside the structure 100 through a channel 3021645 17 extending through a side wall of the cavity formed in the hood 114, and a hole made at through the hood 114 and communicating the channel with the outside of the structure 100. In the example of Figures 1A and 1B, a first channel 116 passes through a side wall 118 of the cavity 110 and opens into the cavity 110 at the on one side thereof, at a first end 117A of the channel 116. At a second end 117B of the channel 116, it communicates with a first hole 120 formed through the entire thickness of the channel 116. 114. Likewise, a second channel 122 passes through a sidewall 124 of the cavity 112 and opens into the cavity 112 at one side thereof, at a first end 123A of the channel 122. At level of a second end 123B of channel 122, cel it communicates with a second hole 126 formed through the entire thickness of the cover 114. The holes 120 and 126 have, for example, in a plane perpendicular to the direction in which these holes extend (these holes extend according to a direction parallel to the Z axis in FIGS. 1A and 1B) sections of any shape (circular, polygonal, etc.) and dimensions (for example the diameter in the case of circular holes) of about a few μm (minus 10 μm) and 100 μm. In this example, the channels 116 and 122 are rectilinear and extend in a direction substantially parallel to the X axis shown, from the first end 117A, 123A to the second end 117B, 123B, this direction being perpendicular to the direction in which the holes extend. The channels 116 and 122 extend horizontally through the side walls 118 and 124, that is to say extend in a direction parallel to the face of the cover 114 secured to the front face 108 of the substrate 102. , the channels 116 and 122 are here made at the interface between the cover 114 and the substrate 102, and are therefore delimited by the side walls 118 and 124 as well as by the front face 108 of the substrate 102. In this example the holes 120 and 126 extend vertically through the cover 114, that is to say perpendicularly to the face of the cover 114 secured to the front face 108 of the substrate 102 and also perpendicularly to the other face of the cover 114 at which the holes 120 and 126 open (parallel to the Z axis in Figures 1A and 1B). In order to be able to successively close the cavities 110 and 112 with atmospheres (pressure and / or nature of the gas or gases) different, the channels 116 and 122 have different heights (the height corresponding to the dimension perpendicular to the direction in which the channel extends, that is to say here the dimension parallel to the Z axis). In the example of FIGS. 1A and 1B, the channel 116 has a height HA which is less than a height HB of the channel 122. The heights HA and HB are, for example, between approximately 0.1 μm and 10 μm. The channels 116 and 122 comprise, in the plane perpendicular to their height (plane parallel to the plane (X, Y)), dimensions, that is to say a length and a width, which may vary between about 0.5 μm. and several tens of microns to see several hundred microns. Each of the channels 116, 122 has, for example, in the (Y, Z) plane, a section of rectangular or polygonal shape. FIG. 2 represents a first step implemented during a hermetic closure of the cavities 110 and 112. During this first step, a first closure layer 128 is deposited, for example by a PVD deposit, on the structure 100. parts 130 of this layer 128 are deposited on the cover 114 and other parts 132, 134 are deposited in the holes 120 and 126. So that the deposition of this layer 128 hermetically closes the cavity 110 but does not close the cavity 112 , the thickness E1 of the layer 128 is chosen such that HA <E1 <HB. Thus, the portion 132 deposited in the hole 120 has a thickness E1 greater than the height HA of the channel 116 and seal the channel 116 at its second end 117B located on the side of the hole 120. The portion 134 deposited in the hole 126 does not block the channel 122 whose height HB is greater than the thickness E1. This step of depositing the layer 128 is carried out under an atmosphere corresponding to that desired in the cavity 110, in terms of the nature of the gas and the pressure, so that this atmosphere is found in the cavity 110 after the deposit of the layer 128. FIG. 3 represents a second step implemented during the hermetic closure of the cavities 110 and 112. During this second step, a second closure layer 136 is deposited on the layer 128. of this layer 136 are deposited at the cap 114, on the portions 130 of the layer 128, and other parts 140, 142 are deposited in the holes 120 and 126, respectively on the portions 132 and 134 of the layer 128. In order for the deposition of this layer 136 to seal the cavity 112 (the cavity 110 is already hermetically sealed by the portion 132 of the layer 128), the thickness E2 of the layer 136 is chosen such that ue HB <(E1 + E2). Thus, the portion 142 of the layer 136 deposited in the hole 126 and the portion 134 of the layer 128 seal the channel 122, at its second end 123B on the side of the hole 126, the height HB is lower 15 to the sum of the thicknesses E1 and E2. This deposition step of the layer 136 is carried out under an atmosphere corresponding to that desired in the cavity 112, in terms of the nature of gas and pressure, so that this atmosphere is found in the cavity 112 after the deposition of the layer 136. The two layers 128 and 136 have, for example, thicknesses E1 and E2 each of between approximately 0.1 μm and 10 μm, and comprise, for example, a metal or any other material that can be deposited under a controlled gas pressure. To seal at least one of the cavities 110, 112 under high vacuum, the layer or layers 128, 136 are preferably deposited by secondary vacuum evaporation where the pressure in the deposition chamber may be between about 10-8. and 10-5 mbar. When at least one of the cavities 110, 112 is closed by controlling a partial pressure of neutral gas such as argon, the layer or layers 128, 136 may be deposited on the structure 100 by spraying, which makes it possible to cover a The pressure range is between about 10-6 and 10-1 mbar with deposit thicknesses of between about 0.1 μm and 10 μm. Prior to the implementation of the deposition steps of the layers 128 and 136, the structure 100 is for example made by carrying out the steps described below. The micro-devices 104 and 106 are firstly made in and / or on the substrate 102. The channels 116 and 122 are then produced by photolithography and etching of the second substrate (for example an RIE etching, or reactive ion etching, when the second substrate comprises silicon). The channels 116 and 122 are made at the face of the second substrate which is intended to be secured to the substrate 102. The cavities 110 and 112 are then made by photolithography and etching (for example a DRIE etching or deep reactive ion etching). , in the case of a second silicon substrate) through the same face of the second substrate at which the channels 116 and 112 have been made. The cavities produced may have the same height, or depth, that is to say a same dimension from said face of the second substrate to the bottom wall of the cavity. In this case, if these cavities are intended to have different volumes, it is possible that the planar dimensions of these cavities, that is to say the dimensions in the plane of the face of the second substrate intended to be secured to the substrate 102, are different. As a variant, it is possible to use several levels of photolithography and etching which make it possible, with equal planar dimensions, to modulate the depth, or height, of the cavities. After the channels 116, 122 and cavities 110, 112 have been formed, a deposition of a dielectric layer over the entire surface of the second substrate is advantageously carried out, for example by carrying out a thermal oxidation in the case of a second substrate comprising silicon and thus forming a layer of SiO 2, for example with a thickness of about one micron, on the surface of the second substrate. W2W-type encapsulation is then performed by joining the second substrate to the substrate 102, for example by: a metallic seal by thermocompression and fusion of a eutectic solder alloy disposed between the two substrates, the eutectic alloy being, for example, AuSn (melting temperature 280 ° C), or AuSi (melting temperature 363 ° C), or AIGe (melting temperature 419 ° C); A direct bonding by metal bonding without fusion between previously formed metal portions on the substrates (for example, Cu / Cu bonding, or Au / Au bonding, or Ti / Ti, or W / W bonding); direct sealing, or direct bonding (or molecular bonding), between the two silicon substrates, or between one of the two silicon substrates and the other made of glass; an anode seal when one of the two substrates is made of silicon and the other substrate is made of glass. Advantageously, the sealing is carried out under the lowest possible vacuum (for example of some 10-5 mbar) so as to favor the degassing of the cavities before they are closed. When a sealing material is used, the deposition of this sealing material is preferably carried out prior to the etching steps forming the channels 116, 112 and the cavities 110, 112 in the second substrate.
    [0018] Once the two substrates are secured to one another, the cover 114 can be thinned at its rear face (face opposite to that in contact with the substrate 102). The remaining thickness of the bonnet at the bonding interface depends on the shape ratio (RF) of the hole. For example, it is possible to deposit metal downhole with RF close to 10. For a hole of diameter equal to about 10 μm, the remaining thickness of the cover is therefore about 100 μm. For a hole of diameter equal to about 100 μm, it is possible to reduce the thickness of the cover to reduce the etching time. The holes 120 and 126 are then made by photolithography and etching, for example DRIE, through the cover 114 and such that the holes 120, 126 open at the second ends 117B, 123B channels 116, 122. If the hood 114 has been previously oxidized on the surface, the formed oxide layer can serve as an etch stop layer. The etching of this oxide layer by the dry route then makes it possible to connect the cavities 110, 112 to the outside via the channels 116, 122 and holes 120, 126. In a variant, the holes 120, 126 can be made after the channels 116, 122 by adding a level of lithography and etching. The hermetic closure of the cavities 110, 112 is then carried out as previously described in connection with FIGS. 2 and 3 via successive deposits of closure layers blocking the second ends 117B, 123B of the channels 116, 122 located at the holes 120 126. In order to obtain a well-controlled atmosphere in the cavities 110, 112, it is possible to perform, before the deposition of the closure layers 128, 136, a drying of the cavities 110, 112 under vacuum at a maximum compatible temperature. with the materials in the presence. As a variant of the embodiment method described above, after the channels 116, 122 and the cavities 110, 112 have been made by photolithography and etching of the second substrate, it is possible to produce a thick deposit of material, for example a polymeric material of polyimide type or BCB (Benzocyclobutene), or an insulating material such as CVD deposited silicon oxide, filling cavities 110, 112 and channels 116, 122 previously defined in the second substrate. A CMP then makes it possible to flatten the surface of the cover 114 at which this thick deposit is made and which is intended to be attached directly to the first substrate 102 by direct bonding. After joining the two substrates together, the eventual thinning of the cover 114 and the etching of the holes 120, 126 in the cover 114, the material filling the cavities 110, 112 and the channels 116, 122 is removed, for example via an oxidizing plasma when the material to be removed is a polymer, or a hydrofluoric acid in vapor form when the material to be removed is silicon oxide, through the holes 120, 126. The closure of the cavities 110, 112 is then performed as previously described by plugging the channels 116, 122. When the micro-devices are made from a sacrificial layer similar in nature to that used to fill the channels and cavities in the hood, it is possible to simultaneously release cavities and devices after assembly. These are therefore protected throughout their manufacture. This variant also makes it possible to implement a Si / Si or metal / metal direct sealing, and thus to avoid the pollution of the cavities by gases that would have originated, for example, from the solder alloy melting.
    [0019] According to another variant of the method for producing the structure 100, the parts of the cover 114 forming the different cavities 110, 112 and their associated channels 116, 122 may be individualized, for example by a cutout of the second substrate before their assembly on the Substrate 102. These individual covers can then be carried over and assembled onto the substrate 102, for example using low-temperature fusible solder alloys (for example based on lead, tin or indium) or by direct metal sealing. / metal (for example Cu / Cu). The channels are plugged by the successive deposits 128 and 136. As a variant of the first embodiment previously described in which the channels 116 and 122 are made by etching the second substrate forming the cover 114, these channels 116 and 112 can be formed in the thickness of the bonding interface between the substrate 114 and the substrate 102. Thus, a sealing bead, for example based on fusible solder alloy (Au-Sn, Au-Si, Al-Ge) or advantageously a metal allowing direct sealing 3021645 24 (Cu, Ti, W) can realize the joining of the two substrates together, the channels 116, 122 being made within this sealing bead whose thickness is for example at least equal to the greatest height of the channels. It is also possible that the channels are partly made in the bonding interface and in the substrate 102 and / or in the second substrate. FIG. 4 is a sectional view of the structure 100 according to the first embodiment in which the cavities 110, 112 are closed in a manner different from that previously described in connection with FIGS. 2 and 3.
    [0020] In this variant, electrical connection elements 144 and 146 are arranged on the front face 108 of the substrate 102 (a dielectric insulating layer, not shown in FIG. 4, however, is disposed between these elements 144 and 146 and the substrate 102). and are each electrically connected to the micro-devices 104 and 106 respectively. The elements 144, 146 each comprise a portion disposed opposite one of the holes 120 and 126 such that the portions 132, 134, 140, 142 of the deposited closure layers are in contact with the elements 144 and 146. The layers closure used herein include at least one electrically conductive material such as a metal, the micro-devices 104 and 106 being electrically connected to these portions 132, 134, 140 and 142 via the elements 144, 146. The parts 140 and 142 of the second closure layer also serve as a seed layer for carrying out electrodeposition deposition or any other deposit making it possible to fill the holes 120, 126 with an electrically conductive material, advantageously copper, and thus to form electrical contacts 148, 150 connected to the micro-devices 104 and 106 and accessible from the outside of the cavities 110 and 112. For this variant, the cover 114 may be covered with a mat dielectric electrode (for example oxide or silicon nitride) prior to the implementation of the deposits of the closure layers, preferably via a CVD deposit with a thickness less than the smallest height of the channels 116, 122. The material of the first closure layer forming the parts 132 and 134 is a metal deposited for example by PVD under controlled carrier gas pressure (argon, krypton). The material of the second closure layer forming the portions 140 and 142 is metallic and capable of serving as a seed layer for subsequent electrolytic deposition of the materials of the electrical contacts 148 and 150, for example gold, copper nickel, etc. Prior to making the electrical contacts 148, 150, the portions of the closure layers deposited on the second substrate (corresponding to the parts 130 and 138 in the example of FIG. 3) can be removed for example via a CMP. The portions of the contacts 148 and 150 thus obtained located on the upper face of the cover 114 (face opposite that facing the upper face 108 of the substrate 102) are in the holes 120, 126. It is then possible to reconstruct, on the upper face of the cover 114, a network of power lines for interconnecting the structure 100 with a chip or other substrate. In another variant, it is possible to make a CMP on the layer 138 in order then to perform a photolithography and an etching of a network of electric lines on the upper face of the cover 114. FIG. 5 is a schematic sectional view of the structure 100 according to the first embodiment and in which the cavities 110, 112 are closed in a manner different from those previously described in connection with FIGS. 2 to 4. As for the structure 100 previously described in connection with FIGS. 2 and 3, the channel 116 whose height HA is the smallest is plugged at its second end 117E3 via the deposition of the first closure layer of thickness E1 greater than the height HA of the channel 116 (and lower at the height Hg of the channel 122 so that it is not clogged during the deposition of this first closure layer). A portion 132 of this first closure layer is deposited in the hole 120 and closes the channel 116. Another portion 134 of this first closure layer is deposited in the hole 126 but mouth not the channel 122. The first layer In this case, the closing part comprises a metal material which also covers the side walls of the holes 120 and 126. Furthermore, the parts of this first closure layer 5 deposited on the face of the cover 114, outside the holes 120, 126, are eliminated. Unlike the structure 100 previously described in connection with Figure 3 in which the channel 122 is plugged via the deposition of a second closure layer, the channel 122 is here blocked at its second end 123B by introducing into the hole 126 a ball 152 of brazing material, or fusible material, whose diameter is smaller than the diameter (or dimensions parallel to the (X, Y) plane) of the hole 126. The diameter of the ball 152 is also greater than the remaining height (HB-E1) uncapped channel 122 so that the ball 152 can not pass in the channel 122. The brazing of this ball 152 under a chosen atmosphere closes the channel 122, and closes the cavity 112, thanks to wetting the sidewalls of the hole 126 and the portion 134 by the brazing material. Such clogging of the channel 122 makes it possible to reach higher pressure levels than those attainable by deposition of the second closure layer 136 as previously described with reference to FIGS. 3 and 4.
    [0021] The first closure layer comprises, for example, gold and the ball 152 comprises a metal or a fusible alloy such as indium, AuSn, Sn, etc. If a brazing material is used to secure the cover 114 to the substrate 102, the material of the ball 152 is chosen such that its melting point is lower than that of the solder material securing the substrates so that the soldering of the ball 152 does not entail a redesign of the material solidarisant the two substrates. FIG. 6 is a schematic sectional view of the encapsulation structure 100 according to the first embodiment in which the cavities 110, 112 are closed in a manner different from those previously described in connection with FIGS. As for the structure 100 previously described in connection with FIGS. 2 and 3, the channel 116, the height HA of which is the smallest, is plugged at its second end 117B via the deposition of a first closure layer. thickness E1 greater than the height HA of the channel 116 (and less than the height Hg of the channel 122 so that it is not clogged during the deposition of this first closure layer). A portion 132 of this first closure layer is deposited in the hole 120 and closes the channel 116. Another portion 134 of this first closure layer is deposited in the hole 126 but mouth not the channel 122. The parts of this first closure layer deposited on the face of the cover 114 outside the holes 120, 126 are removed. In this embodiment, the channel 122 is plugged via a deposition of a dry polymer film whose thickness is for example between a few microns and about 100 microns, advantageously photosensitive, for example laminated on the upper face of the hood 114 under the desired atmosphere at a pressure of less than about 1 bar. This dry film is then etched so that at least one remaining portion 154 is disposed vertically above the hole 126 and forms a plug at the hole 126 on the upper face of the cover 114. The assembly previously made is then covered a hermetic layer 156 deposited on the cover 114, covering in particular the walls of the hole 120, the portion 132 of the first closure layer located in the hole 120 and the portion 154. The layer 156 comprises, for example, oxide or silicon nitride, and / or a metal obtained by PVD or CVD (possibly consolidated by an ECD deposit) and whose thickness may be between about 0.1 μm and 10 μm. In the previously described structures, one or more portions of getter material may be disposed in one or both cavities 110, 112, on one or more of the walls of the cavities, for example to obtain lower pressures in the cavities. Figs. 7A and 7B schematically illustrate an encapsulation structure 100 according to a second embodiment (Fig. 7A is a sectional sectional view and Fig. 7B is a top view of the structure 100). With respect to the first embodiment previously described, the cover 114 of the structure 100 according to the second embodiment does not correspond to a second substrate but to one or more thin layers deposited on the front face 108 of the substrate 102 (TFP encapsulation ). The cavities 110 and 112 are formed via sacrificial material portions whose volumes correspond to those of the cavities 110 and 112 intended to be made and on which the thin layer or layers forming the cap 114 are deposited. As in the first embodiment, access to the inside 15 of each of the cavities 110 and 112 of the structure 100 is achieved via a laterally extending channel such that it opens on one side of one of the cavities 110, 112. In this second embodiment, the channels 116, 122 are formed in the substrate 102. The holes 120, 126 made through the cover 114 communicate the channels 116, 122 with the external environment of the structure 20 100. In the example of FIGS. 7A and 7B, the first channel 116 is formed by a first etched portion of the substrate 102, at the front face 108 of the substrate 102, and opens into the first cavity 110 at a side thereof, at its first end 117A. The first channel 116 communicates with the first hole 120 formed through the thin layer (s) 25 of the hood 114, at its second end 117B. Similarly, the second channel 122 is formed by a second etched portion of the substrate 102, at its front face 108, and opens into the second cavity 112 at one side thereof, at its first end. 123A. The channel 122 communicates with the second hole 126 formed through the thin layer (s) of the cover 114, at its second end 123B. In the example of FIGS. 7A and 7B, the channels 116 and 122 extend horizontally in the substrate 102, that is to say they extend in a direction parallel to the front face 108 of the substrate 102 (parallel to FIG. the X axis in Figs. 7A and 7B), from the first end 117A, 123A to the second end 117B, 123B. The holes 120 and 126 extend vertically through the cover 114, that is, perpendicularly to the front face 108 of the substrate 102 and also perpendicular to the outside face of the cover 114 at which the holes 120 and 126 open out (parallel to the Z axis in Figures 7A and 7B). The holes 120, 126 extend in a direction perpendicular to that in which the channels 116, 122. extend. As in the first embodiment, in order to be able to successively close the cavities 110 and 112 with different atmospheres, the Channels 116 and 122 have different heights HA and HB, with HA <HB. The etchings of the substrate 102 forming the channels 116 and 122 are therefore made at different depths in order to obtain these different channel heights. FIG. 8 represents a first step implemented during hermetic sealing of the cavities 110 and 112. As in the first embodiment, the first closure layer 128 is deposited, for example by a PVD deposit, on the structure Parts 130 of this layer 128 are deposited on the cover 114 and other parts 132, 134 are deposited in the holes 120 and 126. In addition, so that the deposition of this layer 128 hermetically closes the cavity 110 (at level of the second end 117B of the channel 116) but does not close the cavity 112, the thickness E1 of the layer 128 is chosen such that HA <E1 <HB. The portion 134 deposited in the hole 126 does not obstruct the channel 122 whose height HB is greater than the thickness E1. This deposition step of the layer 128 is carried out under an atmosphere corresponding to the desired one 3021645 in the cavity 110, in terms of the nature of the gas and the pressure, so that this atmosphere is found in the cavity 110 after the deposition of the layer 128. FIG. 9 represents a second step implemented during the hermetic closure of the cavities 110 and 112. During this second step, the second closure layer 136 is deposited on the layer 128. Thus, parts 138 of this layer 136 are deposited at the cap 114, on the portions 130, and other parts 140, 142 are deposited in the holes 120 and 126, respectively on the parts 132 and 134 of the layer 128. Thus, the portion 142 the layer 136 deposited in the hole 126, on the portion 134 of the layer 128, blocks the channel 122 at its second end 123B and whose height Hg is less than the sum of the thicknesses E1 and E2. This deposition step of the layer 136 is carried out under an atmosphere corresponding to that desired in the cavity 112 so that this atmosphere is found in the cavity 112 after the deposition of the layer 136. Moreover, given the small thickness of the cover 114, the holes 120 and 126 are here completely blocked by the portions 132, 134, 140 and 142. The two closure layers 128 and 136 used in this second embodiment are for example similar to those previously described in connection with the first embodiment.
    [0022] Prior to the implementation of the deposition steps of the layers 128 and 136, the structure 100 according to the second embodiment is for example carried out by carrying out the steps described below. The micro-devices 104 and 106 are first made in the substrate 102.
    [0023] The channels 116 and 122 are then made in the substrate 102 by photolithography and etching. A layer of sacrificial material, for example comprising a polymer and having a thickness of between approximately 1 μm and 100 μm, is then deposited on the front face 108 of the substrate 102, covering the micro-devices 3021645 31 104 and 106. The material sacrificial may be a photosensitive resin which is shaped by insolation through a mask and etched such that remaining portions of this sacrificial material correspond to the volumes of cavities 110 and 112 to be made. Each of the remaining portions of the sacrificial material covers at least a portion of one of the channels 116 and 122. The thin layer (or thin layers) forming the cap 114 is then deposited on the substrate 102 by covering the portions of sacrificial material. This thin layer may comprise a dielectric (SiO 2 or SiN for example) deposited for example by CVD, or a metal deposited by PVD. Several thin layers 10 may be deposited successively to form the cover 114, these layers may be of different natures relative to each other. The thin layer or each of the thin layers may have a thickness of between about 1 μm and a few microns. The holes 120 and 126 are then made through the cover 114, 15 and the sacrificial material under the cover 114 is etched through these holes, for example via an oxidizing plasma. In addition to removing the sacrificial material forming the cavities 110, 112, this etching step can also release the micro-devices 104, 106 if sacrificial material is present around these micro-devices at this stage of the process.
    [0024] The channels 116, 122 are then plugged as previously described with reference to FIGS. 8 and 9. In a variant of the second embodiment in which the channels 116 and 122 are made in etched portions of the substrate 102, these channels can be made in the thin layers forming the hood 114.
    [0025] FIG. 10A shows such a cover 114 in which the channels 116 and 122 are made. The cover 114 is formed by at least two thin layers superposed one above the other, here a first lower layer 158 and a second upper layer 160.
    [0026] For the portion of the cover 114 formed at the first cavity 110, the hole 120 is formed through the layer 160. The channel 116 is formed by a height space HA between the two layers 158 and 160. channel 116 communicates with the outside of cavity 110 through hole 120. A hole 162 formed through layer 158 and communicates channel 116 with the interior of cavity 110. For hood portion 114 formed at the second cavity 112 to be subsequently closed to the first cavity 110, the hole 126 is formed through the layer 160. The channel 122 is formed by a height space Hg between the two layers 158 and 160. The channel 122 communicates with the outside of the cavity 112 through the hole 126. A hole 164 formed through the layer 158 communicates the channel 122 with the interior of the cavity 112. The holes 162 and 164 have for example, in a plane parallel to the front face 108 of the substrate 102 (plane parallel to the (X, Y) plane), sections of shape and dimensions similar to those of the holes 120 and 126. FIG. 10B represents a view from above of such a structure 100. FIG. 10C shows the structure 100 in which the channel 116 is plugged, at its second end 117B, from the outside by the portion 132 of the first closure layer, and the channel 122 is plugged, at its second end 123B, vis-à-vis the outside by the portions 134 and 142 of the two closure layers. Such a cover 114 may be made by depositing the first layer 158 on the sacrificial material portions defining the volumes of the cavities 110, 112. The holes 162 and 164 are then made by photolithography and etching through the layer 158. A first layer sacrificial material, for example resin and preferably of the same nature as the material of the portions defining the volumes of the cavities 110, 112, is then deposited on the layer 158. This first layer of sacrificial material has a thickness equal to HA . Photolithography and etching of this first layer of sacrificial material are then performed to maintain a remaining portion of this first sacrificial material layer only at channel 116. A second layer of sacrificial material of thickness equal to Hg is then deposited at the level of the channel 122 on the parts of the layer 158 which are not covered by this remaining portion. Thus, the thickness of sacrificial material present on the layer 158 is modulated according to the heights of the desired channels. Photosensitive resins of opposite polarities are advantageously used to make the first and second layers of sacrificial material. The layer 160 is then deposited on these sacrificial materials. The holes 120 and 126 are made through the layer 160 by photolithography and etching. The sacrificial material lying between the two layers 158 and 160 as well as the sacrificial material present under the layer 158 are then etched, for example by an oxidizing plasma, through the holes 120 and 126. The channels are then plugged as previously described. . In all the embodiments and variants described above, for micro-devices intended to operate under a very high vacuum, for example less than approximately 10-4 mbar, the channels can be plugged under secondary vacuum by a metal deposit, by for example a getter material such as titanium or zirconium. It is also possible that the first closure layer 128 and / or the thin layer or layers forming the cover in the second embodiment comprise at least one getter material. The use of a getter material for clogging one or more channels makes it possible to obtain more extensive voids, for example close to 10-6 mbar, thanks to the absorption / adsorption of the gases carried out by the getter. In the embodiments and variants previously described, two distinct cavities are closed successively, the first cavity 3021645 34 being closed via a first deposit which hermetically closes only one of the two cavities. The second cavity is then sealed by a separate step. In general, the structure 100 may comprise n cavities, with n which may be an integer greater than or equal to 2. Each of these n 5 cavities comprises a channel forming an access to the cavity, the channels having different heights. compared to others. Some channels may have similar heights. Thus, the n channels can be made with different heights, with 2 m n. These channels may be sealed by the use of successive depositions of closure material, each deposit hermetically sealing one or more cavities via the capping of the access channels which have similar heights. Considering n channels of heights H1 to Hm, the m successive depositions of heights E1 m-1 to En-, are such that H, <IEj <111 + 1 <1E1 - j = 1 j = 1
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. Encapsulation structure (100) comprising: - at least one cover (114) secured to at least one first substrate (102) and forming at least first (110) and second (112) distinct cavities between the cover (114) and the first substrate (102), - at least first (116) and second (122) channels formed in the first substrate (102) and / or in the hood (114) and / or between the first substrate (102) and the hood (114), such as the first channel (116) has a first end (117A) opening into the first cavity (110) and a second end (117B) opening out of the first cavity (110) via at least one first hole (120) formed through the cover (114), and that the second channel (122) has a first end (123A) opening into the second cavity (112) and a second end (123B) opening out of the second cavity (112) through at least one second hole (126) formed through the hood (114), wherein a height HA of the first channel (116) at its second end (117B) is less than a height HB of the second channel (122) at its second end (123B).
    [0002]
    The encapsulation structure (100) of claim 1, wherein the second end (117B) of the first channel (116) is occluded by at least a first portion (132) of a first closure layer (128). E1 thickness greater than the height HA and lower than the height HB, and wherein the second end (123B) of the second channel (122) is plugged by at least: - a second portion (134) of the first closure layer ( 128) and a portion (142) of a second closure layer (136) of thickness E2 such that HB <(E1 + E2), or 3021645 36 - the second portion (134) of the first closure layer (128) ) and a portion (142) of brazed material on the second portion (134) of the first closure layer (128) and of thickness E2 such that Hg <(E1 + E2), or 5 - the second portion (134) of the first closure layer (128) and a capping layer portion (154, 156) sealing the second hole (126) on the cover (1). 14).
    [0003]
    3. encapsulation structure (100) according to one of the preceding claims, wherein at least a first micro-device (104) is disposed in the first cavity (110) and / or wherein at least a second micro-device device (106) is disposed in the second cavity (112).
    [0004]
    The encapsulation structure (100) according to claims 2 and 3, wherein: - when the first micro-device (104) is disposed in the first cavity (110), the first closure layer (128) comprises minus an electrically conductive material, the encapsulation structure (100) having at least a first electrical connection element (144) connected to the first micro-device (104) and the first portion (132) of the first closure layer (128), and at least a first electrical contact (148) disposed at least in part in the first hole (120) and connected to the first portion (132) of the first closure layer (128), and / or - when the second micro-device (106) is disposed in the second cavity (112), the materials (134, 142) plugging the second end (123B) of the second channel (122) are electrically conductive, the encapsulation structure (100) ) having at least one second con element electrical connection (146) connected to the second micro-device (106) and the second portion (134) of the first closure layer (128), and at least one second electrical contact (146) disposed at least partly in the second hole (126) and connected to the portion (142) of the second closure layer (136) or to the portion (152) of brazed material on the second portion (134) of the first closure layer (128). 5
    [0005]
    5. Encapsulation structure (100) according to one of the preceding claims, wherein the first channel (116) passes through at least one side wall (118) of the first cavity (110) and / or wherein the second channel ( 122) passes through at least one sidewall (124) of the second cavity (112).
    [0006]
    6. encapsulation structure (100) according to one of the preceding claims, wherein the cover (114) comprises at least one substrate said second substrate secured to the first substrate (102) and such that the first (110) and second (112) cavities are formed at least in part in the second substrate.
    [0007]
    The encapsulation structure (100) according to claim 6, wherein the second substrate is secured to the first substrate (102) via a bonding interface disposed between the first substrate (102) and the second substrate and such that the first (116) and second (122) channels are formed at least in part in the bonding interface.
    [0008]
    8. encapsulation structure (100) according to one of claims 1 to 5, wherein the cover (114) comprises at least one thin layer disposed on the first substrate (102), and wherein the first (116) and second (122) channels are formed at least in the first substrate (102). 3021645 38
    [0009]
    9. encapsulation structure (100) according to one of claims 1 to 4, wherein the cover (114) comprises at least two thin layers (158, 160) superimposed one above the other and arranged on the first substrate (102), and wherein the first (116) and second (122) channels are formed at least by gaps between the two thin layers (158, 160).
    [0010]
    10. A method of producing an encapsulation structure (100), comprising the production of at least one cover (114) secured to at least 10 a first substrate (102) forming at least first (110) and second ( 112) separate cavities between the cover (114) and the first substrate (102), and producing at least first (116) and second (122) channels in the first substrate (102) and / or in the cover ( 114) and / or between the first substrate (102) and the cover (114), such that the first channel (116) has a first end (117A) opening into the first cavity (110) and a second end (117B). opening out of the first cavity (110) through at least one first hole (120) formed through the hood (114), and that the second channel (122) has a first end (123A) opening into the second cavity (112) and a second end (123B) opening out of the second cavity (112) through the at least a second hole (126) formed through the cover (114), wherein a height HA of the first channel (116) at its second end (117B) is less than a height HB of the second channel ( 122) at its second end (123B). 25
    [0011]
    11. The method of claim 10, further comprising, after the realization of the cover (114) and the first (116) and second (122) channels, a deposit of at least a first layer of closure (128) of thickness. E1 greater than the height HA and less than the height HB such that 3021645 39 minus a first portion (132) of the first closure layer (128) blocks the second end (117B) of the first channel (116), then: a deposition of at least a second closure layer (136) of thickness E2 such that HB <(E1 + E2) and at least a second portion (134) of the first closure layer (128) and a portion (142) of the second closure layer (136) closes the second end (123B) of the second channel (122), or - a deposit of at least a portion (152) of solder material of thickness E2 such HB <(E1 + E2) on the second portion (134) of the first closure layer (128), and soldering the portion (152) of soldering material, or - making at least a portion (154, 156) of sealing layer plugging the second hole (126) on the cover (114). 15
    [0012]
    12. Method according to one of claims 10 or 11, wherein the embodiment of the cover (114) and the first (116) and second (122) channels comprises at least the implementation of the following steps: - realization of the first (122) 116) and second (122) channels at one face of a second substrate to be secured to the first substrate (102); - Realizing the first (110) and second (112) cavities at said face of the second substrate; - Securing said face of the second substrate to the first substrate (102); Making the first (120) and second (126) holes through the second substrate, wherein the first channel (116) passes through at least one side wall (118) of the first cavity (110) and / or wherein the second channel (122) passes through at least one sidewall (124) of the second cavity (112). 3021645 40
    [0013]
    13. Method according to one of claims 10 or 11, wherein the embodiment of the cover (114) and the first (116) and second (122) channels comprises at least the implementation of the following steps: - realization of the first (122) 110) and second (112) cavities at one face of a second substrate to be secured to the first substrate (102); - Realizing a bonding interface on said face of the second substrate and / or on a face (108) of the first substrate (102) to which the second substrate is intended to be secured, the first (116) and second (122) ) channels being formed at least in part in the bonding interface; - Securing said face of the second substrate to the first substrate (102) via the bonding interface; - Making the first (120) and second (126) holes through the second substrate. 15
    [0014]
    14. Method according to one of claims 10 or 11, wherein the embodiment of the cover (114) and the first (116) and second (122) channels comprises at least the implementation of the following steps: - realization of the first (122) 116) and second (122) channels in the first substrate (102); - Making first and second portions of sacrificial material on the first substrate (102), whose volumes correspond to those of the first (110) and second (112) cavities and such that the first portion of sacrificial material covers at least a portion of the first channel (116) and that the second portion of sacrificial material covers at least a portion of the second channel (122); depositing at least one thin layer on the first and second portions of sacrificial material; Making the first (120) and second (126) holes through the thin layer; etching the first and second sacrificial material portions through the first (120) and second (126) holes. 5
    [0015]
    15. Method according to one of claims 10 or 11, wherein the embodiment of the cover (114) and the first (116) and second (122) channels comprises at least the implementation of the following steps: realization of first and second portions of sacrificial material on the first substrate (102), whose volumes correspond to those of the first (110) and second (112) cavities; depositing at least a first thin layer (158) on the first and second portions of sacrificial material; - producing third (162) and fourth (164) holes through the first thin layer (158), the third hole (162) being formed at a location of the first end (117A) of the first channel (116); ) to be provided and the fourth hole (164) being formed at a location of the first end (123A) of the second channel (122) to be provided; - making, on the first thin layer (158), at least a third portion of sacrificial material having a thickness equal to the height HA, at least at a location of the first channel (116), and at least a fourth portion of sacrificial material having a thickness equal to the height Hg, at least at a location of the second channel (122); depositing at least a second thin layer (160) on the first thin layer (158), covering the third and fourth portions of sacrificial material; Making the first (120) and second (126) holes through the second thin layer (160); etching the first, second, third and fourth sacrificial material portions through at least the first (120) and second (126) holes.
    类似技术:
    公开号 | 公开日 | 专利标题
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    同族专利:
    公开号 | 公开日
    US20150351246A1|2015-12-03|
    FR3021645B1|2019-06-14|
    EP2952471B1|2018-09-19|
    EP2952471A1|2015-12-09|
    US9554471B2|2017-01-24|
    引用文献:
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    US20080211076A1|2007-03-01|2008-09-04|Kabushiki Kaisha Toshiba|Semiconductor device and manufacturing method thereof|
    US20080308919A1|2007-05-31|2008-12-18|Susumu Obata|Hollow sealing structure and manufacturing method for hollow sealing structure|
    US20130265701A1|2012-04-04|2013-10-10|Seiko Epson Corporation|Electronic device and manufacturing method thereof, electronic apparatus, and moving body|
    US20140008738A1|2012-06-26|2014-01-09|Wispry|Mems die and methods with multiple-pressure sealing|CN106946218A|2015-12-08|2017-07-14|罗伯特·博世有限公司|Additional facet for the stable hole internal pressure in service life|
    CN112285380B|2020-10-20|2022-03-18|合肥工业大学|Optical MEMS acceleration sensor and preparation method thereof|DE102008016004A1|2008-03-27|2009-10-08|Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.|Microelectromechanical inertial sensor with atmospheric damping|
    FR2933390B1|2008-07-01|2010-09-03|Commissariat Energie Atomique|METHOD FOR ENCAPSULATING A MICROELECTRONIC DEVICE BY A GETTER MATERIAL|
    FR2933389B1|2008-07-01|2010-10-29|Commissariat Energie Atomique|STRUCTURE BASED ON SUSPENDED GETTER MATERIAL|
    DE102008040970A1|2008-08-04|2010-02-11|Robert Bosch Gmbh|Micromechanical device with caverns with different atmospheric internal pressure|
    FR2947812B1|2009-07-07|2012-02-10|Commissariat Energie Atomique|SEALED CAVITY AND METHOD FOR PRODUCING SAID CAVITY|
    FR2950876B1|2009-10-07|2012-02-10|Commissariat Energie Atomique|METHOD FOR TREATING A GETTER MATERIAL AND METHOD FOR ENCAPSULATING SUCH A GETTER MATERIAL|
    FR2964094B1|2010-08-31|2012-09-28|Commissariat Energie Atomique|ASSEMBLING OBJECTS THROUGH A SEAL CORD HAVING INTERMETALLIC COMPOUNDS|
    FR2976932A1|2011-06-23|2012-12-28|Commissariat Energie Atomique|STRUCTURE A GETTER MATERIAL PROTECTS HERMETICALLY DURING ITS ACHIEVEMENT|
    US9540230B2|2011-06-27|2017-01-10|Invensense, Inc.|Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures|
    FR2986901B1|2012-02-15|2015-07-03|Commissariat Energie Atomique|MICROELECTRONIC SUBSTRATE COMPRISING A LAYER OF ORGANIC MATERIAL ENTERREE|
    US8350346B1|2012-07-03|2013-01-08|Invensense, Inc.|Integrated MEMS devices with controlled pressure environments by means of enclosed volumes|
    FR2994332B1|2012-07-31|2015-05-15|Commissariat Energie Atomique|METHOD FOR ENCAPSULATING A MICROELECTRONIC DEVICE|
    FR3008965B1|2013-07-26|2017-03-03|Commissariat Energie Atomique|ENCAPSULATION STRUCTURE COMPRISING A MECHANICALLY REINFORCED HOOD AND GETTER EFFECT|US10317211B2|2013-12-30|2019-06-11|Robert Bosch Gmbh|Robust inertial sensors|
    DE102015224519A1|2015-12-08|2017-06-08|Robert Bosch Gmbh|MEMS component with two different internal pressures|
    DE102015224545A1|2015-12-08|2017-06-08|Robert Bosch Gmbh|Method for producing a micromechanical component|
    EP3875424A1|2020-03-05|2021-09-08|Meridian Innovation Pte Ltd|Cmos cap for mems devices|
    DE102018209483A1|2018-06-14|2019-12-19|Robert Bosch Gmbh|A method of manufacturing a system comprising a first microelectromechanical element and a second microelectromechanical element; system|
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    2015-12-04| PLSC| Search report ready|Effective date: 20151204 |
    2016-07-08| PLFP| Fee payment|Year of fee payment: 3 |
    2017-06-30| PLFP| Fee payment|Year of fee payment: 4 |
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    2021-03-12| ST| Notification of lapse|Effective date: 20210205 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1455019|2014-06-03|
    FR1455019A|FR3021645B1|2014-06-03|2014-06-03|ENCAPSULATION STRUCTURE WITH MULTIPLE CAVITIES HAVING ACCESS CHANNELS OF DIFFERENT HEIGHT|FR1455019A| FR3021645B1|2014-06-03|2014-06-03|ENCAPSULATION STRUCTURE WITH MULTIPLE CAVITIES HAVING ACCESS CHANNELS OF DIFFERENT HEIGHT|
    US14/725,028| US9554471B2|2014-06-03|2015-05-29|Structure with several cavities provided with access channels of different heights|
    EP15170144.8A| EP2952471B1|2014-06-03|2015-06-01|Encapsulation structure comprising several cavities having vents of differing heights|
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